{"270821":{"#nid":"270821","#data":{"type":"event","title":"MRSEC Seminar Series with Dr. Len Feldman","body":[{"value":"\u003Cp\u003E\u003Cstrong\u003EAbstract: \u003C\/strong\u003EThe 4H polytype of silicon carbide (SiC) is a promising candidate for high temperature and high power metal-oxide-semiconductor device applications. It is also used in the formation of graphene on SiC. In such applications high quality surfaces and interfaces are critical. For power MOSFETs the limit to application has been the dielectric\/SiC interface which gives rise to a low inversion layer mobility. This is in sharp contrast to Si\/SiO\u003Csub\u003E2\u003C\/sub\u003E interfaces. This talk will describe the work of our team (see below) in characterizing and modifying the interface to raise the mobility by a factor of ~100 in the last 10 years. The current mobility values, although adequate for commercial devices, remain below expectation and require further research.\u003C\/p\u003E\u003Cp\u003ECo-workers: Auburn University-J. Williams, S. Dhar; Rutgers MEIS Group-T. Gustafsson, Can Xu, S. Shubeita, H. Lee; Rutgers Chemistry-E. Garfunkel, Yi Xu\u003C\/p\u003E\u003Cp\u003E\u0026nbsp;\u003C\/p\u003E","summary":null,"format":"limited_html"}],"field_subtitle":"","field_summary":[{"value":"\u003Cp\u003E\u003Cstrong\u003E\u0026nbsp;\u003C\/strong\u003EOur\u0026nbsp;first\u0026nbsp;MRSEC Seminar of the\u0026nbsp;Spring Semester\u0026nbsp;welcomes Dr. Len Feldman, from the\u0026nbsp; Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University on\u0026nbsp;Tuesday, February 11, 2014\u0026nbsp;at 3:00pm in the Marcus Nanotechnology\u0026nbsp;Building, First Floor Event space.\u0026nbsp; His talk is titled:\u0026nbsp;\u003Cstrong\u003EStructure and composition of the 4H-SiC surface and dielectric interface\u003C\/strong\u003E\u003C\/p\u003E\u003Cp\u003E\u0026nbsp;\u003C\/p\u003E","format":"limited_html"}],"field_summary_sentence":[{"value":"This talk will describe the work of our team (see below) in characterizing and modifying the interface to raise the mobility by a factor of ~100 in the last 10 years. The current mobility values, although adequate for commercial devices, remain below"}],"uid":"27428","created_gmt":"2014-01-23 15:35:33","changed_gmt":"2017-04-13 21:23:21","author":"Gina Adams","boilerplate_text":"","field_publication":"","field_article_url":"","field_event_time":{"event_time_start":"2014-02-11T14:00:00-05:00","event_time_end":"2014-02-11T15:00:00-05:00","event_time_end_last":"2014-02-11T15:00:00-05:00","gmt_time_start":"2014-02-11 19:00:00","gmt_time_end":"2014-02-11 20:00:00","gmt_time_end_last":"2014-02-11 20:00:00","rrule":null,"timezone":"America\/New_York"},"extras":["free_food"],"related_links":[{"url":"http:\/\/mse.rutgers.edu\/faculty\/leonard_feldman","title":"Dr. Feldman\u0027s research website"}],"groups":[{"id":"60783","name":"MRSEC"}],"categories":[],"keywords":[{"id":"71701","name":"carbon nanosystems"},{"id":"429","name":"graphene"},{"id":"84721","name":"power MOSFETs"}],"core_research_areas":[],"news_room_topics":[],"event_categories":[{"id":"1789","name":"Conference\/Symposium"}],"invited_audience":[{"id":"78751","name":"Undergraduate students"},{"id":"78761","name":"Faculty\/Staff"},{"id":"78771","name":"Public"},{"id":"174045","name":"Graduate students"}],"affiliations":[],"classification":[],"areas_of_expertise":[],"news_and_recent_appearances":[],"phone":[],"contact":[{"value":"\u003Cp\u003EGina Adams, MRSEC Program Manager\u003C\/p\u003E\u003Cp\u003E\u003Ca href=\u0022mailto:gina.adams@mrsec.gatech.edu\u0022\u003Egina.adams@mrsec.gatech.edu\u003C\/a\u003E\u003C\/p\u003E\u003Cp\u003E\u0026nbsp;\u003C\/p\u003E","format":"limited_html"}],"email":[],"slides":[],"orientation":[],"userdata":""}}}