270821 event 1390491333 1492118601 <![CDATA[MRSEC Seminar Series with Dr. Len Feldman]]> Abstract: The 4H polytype of silicon carbide (SiC) is a promising candidate for high temperature and high power metal-oxide-semiconductor device applications. It is also used in the formation of graphene on SiC. In such applications high quality surfaces and interfaces are critical. For power MOSFETs the limit to application has been the dielectric/SiC interface which gives rise to a low inversion layer mobility. This is in sharp contrast to Si/SiO2 interfaces. This talk will describe the work of our team (see below) in characterizing and modifying the interface to raise the mobility by a factor of ~100 in the last 10 years. The current mobility values, although adequate for commercial devices, remain below expectation and require further research.

Co-workers: Auburn University-J. Williams, S. Dhar; Rutgers MEIS Group-T. Gustafsson, Can Xu, S. Shubeita, H. Lee; Rutgers Chemistry-E. Garfunkel, Yi Xu

 

]]>  Our first MRSEC Seminar of the Spring Semester welcomes Dr. Len Feldman, from the  Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University on Tuesday, February 11, 2014 at 3:00pm in the Marcus Nanotechnology Building, First Floor Event space.  His talk is titled: Structure and composition of the 4H-SiC surface and dielectric interface

 

]]> Gina Adams, MRSEC Program Manager

gina.adams@mrsec.gatech.edu

 

]]> <![CDATA[]]> http://mse.rutgers.edu/faculty/leonard_feldman 60783 1789 71701 429 84721