671207
event
1700634860
1700634883
<![CDATA[Ph.D. Proposal Oral Exam - Zhiyu Xu]]>
Title: Development, Fabrication and Characterization of III-Nitride Bipolar Devices: Rectifiers, Avalanche Photodiodes, and Laser Diodes
Committee:
Dr. Dupuis, Advisor
Dr. Cai, Chair
Dr. Adibi
Dr. Yoder
Dr. Otte
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The objective of the proposed research is to develop III-nitride (III-N) based optoelectronic and electronic bipolar devices, mainly focusing on device fabrication and characterization. Different III-N bipolar devices have their specific applications and implementations, nevertheless, fabrication process and characterization approaches share similarities in terms of improving device performance and understanding the III-N device physics. The major focuses of III-N devices discussed in the scope of this proposal are gallium nitride-based vertical p-i-n rectifier, avalanche photodiode, and ultraviolet laser diode.
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